w u xi nce po w e r semico nduc tor co., lt d pag e v 1 . 1 1 NCE7190 pb free pro duct http://www.ncepower.com nce n-channel enhancement mode power mosfet description t he nce719 0 uses adv anc ed trenc h techno log y an d desi gn to pr ovi de e x c e ll ent r ds (on) w ith l o w gate ch arg e . it can be us ed i n a w i d e variet y of appl icati ons. general features v ds = 71v ,i d = 90a r ds (on) < 6.8m ? @ v gs =10v ( t y p :5.9m ? ) speci a l pro cess techno lo g y for hi gh esd capa bil i t y high dens ity cel l des ign fo r ultra lo w r d s on f u ll y c har a cterized av ala n che volta ge a n d current good stabi li t y an d unif o rmi t y w i th hi gh e as exce ll ent p a ckag e for goo d heat diss ip ati on application po w e r s w itc h i ng ap plic atio n hard s w itch e d and h i gh fre que nc y c i rcuits uninterr upti b l e po w e r supp l y 100% uis tested! 100% vds tested! schematic dia g ram package marking and ordering information de v i ce marking de v i c e d e v i ce pa ck age reel size ta pe w i dt h quantity nce7 190 nce7 190 to-220-3l - - - absolute maximum ratings (t c =25 unless otherw ise n o ted) parameter s y mbol limit unit drain-s ourc e voltag e v ds 71 v gate-source voltage v gs 20 v drain c u rre nt-conti nuo us i d 90 a drain c u rre nt-conti nuo us(t c = 100 ) i d (100 ) 63 a pulse d drai n c u rrent i dm 320 a maximum po w e r dissipation p d 170 w marking and pin assig n m en t t o -220-3l to p v i e w http://
w u xi nce po w e r semico nduc tor co., lt d pag e v 1 . 1 2 NCE7190 pb free pro duct http://www.ncepower.com derati ng factor 1.13 w / sing le pu lse av ala n che ener g y (note 5) e as 550 mj operatin g junc tion an d st orag e t e mperature rang e t j ,t st g -55 t o 175 thermal characteristic t hermal resist ance,ju nctio n -to-case (note 2 ) r jc 0.88 /w electrical characteristics (t c =25 unless otherw ise noted ) parameter s y mbol condition min t y p max unit off ch aracte r istics drain-s ourc e breakd o w n v o l t age bv ds s v gs =0 v i d = 250 a 71 74 - v z e ro gate voltage dr ain c u rr ent i ds s v ds = 71v,v gs =0v - - 1 a gate-bod y l e a k age c u rrent i gss v gs = 20v,v ds =0v - - 100 na on characteristics (note 3) gate t h reshol d voltag e v gs( t h) v ds =v gs ,i d = 250 a 2 3 4 v drain-s ourc e on-state resis t ance r ds (on) v gs = 10v, i d = 4 0a - 5.9 6.8 m ? f o r w a r d t r anscond uctanc e g fs v ds = 10v,i d = 40a - 50 - s d ynamic characteristics (note4) gate resistance rg v ds =0 v,v gs = 0 v,f = 1.0mhz - 0.63 - ? input cap a cita nce c lss - 487 1 - pf output cap a cit ance c oss - 630.6 - pf revers e t r ansfer capac itanc e c rss v ds = 15v,v gs =0v, f = 1.0mhz - 410.3 - pf s witching characteristics (note 4) t u rn-on delay t i me t d( on) - 36.1 - ns t u rn-on rise t i me t r - 54.3 - ns t u rn-off delay t i me t d( o f f ) - 85.2 - ns t u rn-off fall t i me t f v dd = 30v,i d =4 2a v gs = 10v,r gen =10 ? - 37.3 - ns t o tal gate charge q g - 85.7 - nc gate-source c harg e q gs - 23.2 - nc gate-drain charge q gd v ds = 48v,i d = 84a, v gs = 10v - 31.2 - nc drain - source diode characteristics diod e f o r w ar d voltage (n ote 3) v sd v gs =0 v,i s =20a - - 1.2 v diod e f o r w ar d current (note 2) i s - - - 90 a rever s e recovery t i me t rr - 88.3 - ns reverse recove r y c harge qrr t j = 25c, if =84a di/dt = 100a/ s ( note3) - 65.9 - nc for w a r d t u rn -on ti me t on intrinsic turn-o n time is neg ligible (turn-on is dominated by ls+ld) notes: 1. r e pet itiv e r a ti n g : p u l s e w i dth l i mi ted by max i mum junc tio n t e mp er atu r e. 2. sur f ac e mo unted on fr4 boa r d , t 10 se c. 3. p u l s e t e s t: p u l s e w i dt h 30 0 s, duty cy cle 2% . 4. g u ar ant ee d by des ig n, not s ubj ec t to pr od uc tio n 5. eas c o n d i t i on : tj=2 5 ,v dd =35v , v g =10v ,l= 0 .5mh ,rg=25 ?
w u xi nce po w e r semico nduc tor co., lt d pag e v 1 . 1 3 NCE7190 pb free pro duct http://www.ncepower.com test circuit 1) e as test circuit 2) gate cha r ge test circ uit 3) s w itch time test circuit
w u xi nce po w e r semico nduc tor co., lt d pag e v 1 . 1 4 NCE7190 pb free pro duct http://www.ncepower.com t y pical electrical and therma l characteristics (curves) vds drain-source v o lt age (v) figure 1 output characteristics vgs gate-source v o lt age (v) figure 2 t r ansfer characteristics i d - drain cu rrent (a) figure 3 rdson- drain current t j -junction t e mperatu r e( ) figure 4 rdson-junctiontemperature qg gate ch arge (n c) figure 5 gate charge vsd source-drain v o lt ag e (v) figure 6 source- drain diode forw a rd rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a)
w u xi nce po w e r semico nduc tor co., lt d pag e v 1 . 1 5 NCE7190 pb free pro duct http://www.ncepower.com vds drain-source v o l t age (v) figure 7 cap acit a nce vs vds vds drain-source v o lt age (v) figure 8 safe operation area t j -junction t e mperatu r e( ) figure 9 bv dss vs junction temperature t j -junction t e mperatu r e( ) figure 10 pow e r de-rating power dissipation (w) c cap a cit ance (nf) square w a ve pluse dura tion(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized ef fective t r ansient thermal im p edance i d - drain current (a)
w u xi nce po w e r semico nduc tor co., lt d pag e v 1 . 1 6 NCE7190 pb free pro duct http://www.ncepower.com to-220-3l package information dimensions in mil limeters dimensions in inches sy mbol min. max. min. max. a 4.400 4.600 0.173 0.181 a1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 d 9.910 10.25 0 0.390 0.404 e 8.950 0 9.750 0.352 0.384 e1 12.65 0 12.95 0 0.498 0.510 e 2.540 t yp. 0.100 typ. e1 4.980 5.180 0.196 0.204 f 2.650 2.950 0.104 0.116 h 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 l 12.90 0 13.40 0 0.508 0.528 l1 2.850 3.250 0.112 0.128 v 7.500 ref . 0.295 ref. 3.400 3.800 0.134 0.150
w u xi nce po w e r semico nduc tor co., lt d pag e v 1 . 1 7 NCE7190 pb free pro duct http://www.ncepower.com attention: an y a nd al l nce po w e r products descri b ed or contai ne d herei n do n o t have specific a t ions that can han dle a p p licat ions tha t requ ire e x tr emel y h i gh lev e ls of reli ab ilit y, such as life-s u pport s y stems, aircraft' s cont rol s y stems, o r other app lica t ions w h os e failur e can be re asonabl y expect ed to result in serious ph ysica l an d/or material damag e. consu l t w i t h yo ur n c e po w e r re pr esentativ e nea rest you b e fore us ing an y nc e po w e r pro d u cts described o r containe d her ein i n such ap plic atio ns. nce po w e r assumes no responsi b ilit y for eq uipm ent failu r e s that result from us ing products at values that e x ce ed, even m o me nta r il y , r a ted v a l u es (such as m a ximum r a tings , operati ng c o n d itio n ra nges, or other par am eters) listed i n prod uc ts specificatio n s of an y a nd a l l nce po w e r pr oducts descr ib ed or conta i n e d here i n. specificati ons of an y a n d all nce po w e r products des cribe d or conta i ne d here i n st ipul ate the performanc e, characteristics , and functio n s o f the described prod ucts in the ind epe nd ent state, and ar e no t guarante e s of the performan ce, characterist ics, and fu nctio n s o f the descri b e d prod ucts as mo unted in th e cu stom er?s pr odu cts or equ ipme nt. t o verif y s ymptoms an d states that cannot be evalu a ted in an in d epe nd ent device, the cu stomer s houl d al w a ys evalu a te and test devic es mount ed i n the cu stomer?s pro d u cts or equipm e n t. nce po wer semiconductor co.,l t d . strives to supply hi gh-qualit y high-reliabilit y pr oducts. ho w e v e r, any and all semico nductor products fail w i th some probab ilit y. it is possible that these proba bil i stic failures cou l d give ris e to accid ents or events that coul d en dan g e r hum a n lives, that could g i ve rise to smoke or fire, or that coul d cause d a mag e to other propert y . w hen de signi ng e qui p m ent, adopt safet y meas ure s so that these kinds of acci dents or events can not occur. such measur es incl ud e but are not li mited to protec tive circui ts an d error preve n tion circu i ts for safe desi gn, red und ant design, an d structural de sign. in the eve n t that an y or all nc e po wer prod ucts(inc ludi ng tec hnic a l dat a, servic es) descri b e d or conta i ne d h e rei n are control l ed u n d e r an y of ap pli cabl e local e xport control la w s a nd reg u lat i ons, such pro ducts must not be exp o rted w i t h o u t obtai nin g the e x p o rt lice n se from the auth o rit i es conc erne d i n accord anc e w i t h the ab ove la w . no part of this pub lic ation ma y b e repr o d u ced or transm i tted in an y f o r m or b y an y m eans, el ectroni c or mechanic a l, includ in g photoc op yi ng a nd record ing, o r an y informati on storage or retrieva l s y stem , or other w i se, w i t h o u t the prior w r itten permis sio n of nce po w e r semiconductor co.,l t d . information (inclu di ng circ uit dia g rams a nd circu i t par a m eter s) here i n is for e x amp l e onl y ; it is n o t guar antee d fo r volume prod uction. n c e po w e r be li eves inform ati on her ei n is a ccu rate an d r e lia bl e, but no guar a n tees a r e made or i m plie d regar din g its use or an y infri n gemen ts of intellect ual pr op e r t y rights or oth e r rights of thir d parties. an y a n d all inf o rmat i on d e scribed or contai n ed h e rei n a r e subj ect to cha nge w i thout n o tice due to product/technology impr ovem ent, etc. when designing equipment, refer to the "deliver y specificati on" for the nce po w e r prod uct that y o u inten d to use . t h is catalo g provid es infor m ation as of sep.20 10. spec i f ic ations a nd in formation h e rei n are subj ect to chang e w i t h o u t notice.
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